Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.11851/10303
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dc.contributor.authorAras, Fikret Gonca-
dc.contributor.authorAvad, Jihad-
dc.contributor.authorYeltik, Aydan-
dc.date.accessioned2023-04-16T09:55:37Z-
dc.date.available2023-04-16T09:55:37Z-
dc.date.issued2022-
dc.identifier.issn1862-6300-
dc.identifier.issn1862-6319-
dc.identifier.urihttps://doi.org/10.1002/pssa.202200503-
dc.identifier.urihttps://hdl.handle.net/20.500.11851/10303-
dc.description.abstractTransition metal dichalcogenides (TMDs) are of interest for next-generation electronics and optoelectronics owing to their unique optical and electronic functionalities. Although atomically thin flat TMD layers have been investigated in various device applications, pattern-mediated growth serves great promise for revealing novel properties and application opportunities of TMDs. Herein, controlled size distribution of CVD-grown monolayer MoS2 flakes by varying the distance between surface pattern features and the effects of patterning on the optical properties of MoS2 domains is reported. Larger flakes and higher uniformity in size distribution are obtained via patterning in comparison with the results from bare surface. Superior photoluminescence (PL) performances are observed for the 2D MoS2 grown on the pattern valleys when compared with the sample on the hill regions and the bare surface. The results demonstrate the notable potential of 2D TMDs for applications in electronics and optoelectronics.en_US
dc.description.sponsorshipScientific and Technological Research Council of Turkey [TUEBITAK 121M601, TUEBITAK 118C524]en_US
dc.description.sponsorshipThis work was supported by Scientific and Technological Research Council of Turkey project numbers TUEBITAK 121M601 and TUEBITAK 118C524.en_US
dc.language.isoenen_US
dc.publisherWiley-V C H Verlag Gmbhen_US
dc.relation.ispartofPhysica Status Solidi A-Applications and Materials Scienceen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject2D materialsen_US
dc.subjectchemical vapor depositionen_US
dc.subjectnucleation densityen_US
dc.subjectpattern-mediated growthen_US
dc.subjectsize distributionsen_US
dc.subjecttransition metal dichalcogenidesen_US
dc.subjectLarge Single-Crystalen_US
dc.subjectLayer Mos2en_US
dc.subjectEpitaxial-Growthen_US
dc.subjectGrapheneen_US
dc.subjectOxideen_US
dc.subjectPhotoluminescenceen_US
dc.subjectTransistorsen_US
dc.subjectSubstrateen_US
dc.titleGlass-Assisted Chemical Vapor Deposition-Grown Monolayer Mos2: Effective Control of Size Distribution Via Surface Patterningen_US
dc.typeArticleen_US
dc.departmentTOBB ETÜen_US
dc.identifier.volume219en_US
dc.identifier.issue24en_US
dc.authoridYeltik, Aydan/0000-0001-6976-4680-
dc.authoridAras, F. Gonca/0000-0003-0599-5441-
dc.identifier.wosWOS:000891665600001en_US
dc.identifier.scopus2-s2.0-85143212769en_US
dc.institutionauthorYeltik, Aydan-
dc.identifier.doi10.1002/pssa.202200503-
dc.authorwosidAras, Gonca/AAQ-9215-2021-
dc.authorscopusid57730575000-
dc.authorscopusid57214135765-
dc.authorscopusid35560157500-
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.scopusqualityQ2-
item.openairetypeArticle-
item.languageiso639-1en-
item.grantfulltextnone-
item.fulltextNo Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
crisitem.author.dept02.6. Department of Material Science and Nanotechnology Engineering-
crisitem.author.dept02.6. Department of Material Science and Nanotechnology Engineering-
Appears in Collections:Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü / Department of Material Science & Nanotechnology Engineering
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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