Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.11851/11500
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dc.contributor.authorBafekry, A.-
dc.contributor.authorFadlallah, M. M.-
dc.contributor.authorFaraji, M.-
dc.contributor.authorKhan, S. Hasan-
dc.contributor.authorJappor, H. R.-
dc.contributor.authorShokri, Babak-
dc.contributor.authorGhergherehchi, M.-
dc.date.accessioned2024-04-20T13:35:39Z-
dc.date.available2024-04-20T13:35:39Z-
dc.date.issued2024-
dc.identifier.issn1463-9076-
dc.identifier.issn1463-9084-
dc.identifier.urihttps://doi.org/10.1039/d3cp05360a-
dc.identifier.urihttps://hdl.handle.net/20.500.11851/11500-
dc.description.abstractIn this work, employing first-principles calculations, we systematically investigate the atomic structure and electronic and optical properties of the AgTe monolayer, as well as the impact of alkali metal (Li, Na, K) and alkaline earth metal (Be, Mg, Ca) atoms decoration. The AgTe monolayer exhibits metallic characteristics. When Li, Na, K, and Mg atoms are decorated on the AgTe monolayer, the decorated AgTe monolayers are dynamically stable. In contrast, with Be and Ca atoms, the decorated structures are found to be dynamically unstable. Interestingly, the decoration of Li, Na, and K atoms into the AgTe monolayer can open the band gaps in the decorated Li-, Na- and K-AgTe monolayers around the Fermi level, leading to the actualization of metal-to-semiconductor transitions. In contrast, the decorated Mg-AgTe monolayer maintains its metallic characteristic. The highest electron and hole mobilities are achieved in the Na-AgTe monolayer among the decorated structures, suggesting the applicability of this structure in photovoltaic applications. The optical study shows that Li-, Na- and K-decorated AgTe monolayers have improved light absorption in the visible light region. Consequently, our findings shed light on the decoration of these 2D material monolayers and can potentially enhance and motivate studies in producing these monolayers for current nanodevices and future applications.en_US
dc.description.sponsorshipIran National Science Foundation [4020997]; Iran National Science Foundation (INSF)en_US
dc.description.sponsorshipThis work is based upon research funded by the Iran National Science Foundation (INSF) under project no. 4020997. Furthermore, the numerical calculations reported were fully/partially performed at TUBITAK ULAKBIM, High Performance and Grid Computing Center (TRUBA resources).en_US
dc.language.isoenen_US
dc.publisherRoyal Soc Chemistryen_US
dc.relation.ispartofPhysical Chemistry Chemical Physicsen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleMetal To Semiconductor Switching in the Agte Monolayer Via Decoration With Alkali Metal and Alkaline Earth Metal Atoms: a First-Principles Perspectiveen_US
dc.typeArticleen_US
dc.departmentTOBB ETÜen_US
dc.identifier.volume26en_US
dc.identifier.issue14en_US
dc.identifier.startpage11056en_US
dc.identifier.endpage11063en_US
dc.authoridJappor, Hamad Rahman/0000-0002-8885-3985-
dc.authoridFaraji, Mehrdad/0000-0002-8915-1125-
dc.authoridBafekry, Asadollah/0000-0002-9297-7382-
dc.authoridHasan Khan, Md. Sakib/0000-0002-1698-6922-
dc.identifier.wosWOS:001190633300001en_US
dc.identifier.scopus2-s2.0-85189686236en_US
dc.institutionauthorFaraji, M.-
dc.identifier.pmid38529535en_US
dc.identifier.doi10.1039/d3cp05360a-
dc.authorwosidJappor, Hamad Rahman/K-6055-2013-
dc.authorwosidFaraji, Mehrdad/AAN-2082-2020-
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
item.openairetypeArticle-
item.languageiso639-1en-
item.grantfulltextnone-
item.fulltextNo Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
Appears in Collections:PubMed İndeksli Yayınlar Koleksiyonu / PubMed Indexed Publications Collection
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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