Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.11851/11661
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bafekry, Asadollah | - |
dc.contributor.author | Karbasizadeh, Siavash | - |
dc.contributor.author | Faraji, Mehrdad | - |
dc.contributor.author | Jappor, Hamad Rahman | - |
dc.contributor.author | Ziabari, Ali Abdolahzadeh | - |
dc.contributor.author | Fadlallah, Mohamed M. | - |
dc.contributor.author | Chang, Gap Soo | - |
dc.date.accessioned | 2024-07-24T11:56:53Z | - |
dc.date.available | 2024-07-24T11:56:53Z | - |
dc.date.issued | 2024 | - |
dc.identifier.issn | 2513-0390 | - |
dc.identifier.uri | https://doi.org/10.1002/adts.202400438 | - |
dc.identifier.uri | https://hdl.handle.net/20.500.11851/11661 | - |
dc.description | Rahman, Hamad/0000-0002-8885-3985 | en_US |
dc.description.abstract | Recent exciting developments in synthesis and properties study of the germanane (GeH) mono-layer have inspired us to investigate the structural and electronic properties of the van der Waals heterostructures (HTS) of GeH/InSe and GeH/In2Se3 through a first-principles methodology. In this study, structural and electronic properties of the HTS are examined thoroughly. GeH/InSe and GeH/In2Se3 are determined as n-type Schottky with a Schottky barrier height (SBH) of 0.40 eV and n-type ohmic, respectively. GeH/InSe turns out as a semiconductor with a direct bandgap of 0.62 eV, while GeH/In2Se3 is seen to be a metal. The results show that changing of the bandgap and SBH in very small values. For GeH/In2Se3 the effects are even less substantial, as the metallic or n-type nature of the material does not change. The biaxial strain and electric field have more tangible effects on the characteristics of the HTS. A mixture of compressive and tensile strain is seen to have the capability of changing GeH/InSe into a metal and at the same time transform it to an n-type/p-type ohmic or p-type Schottky contact. The results given here can guide future research in the field of HTS and especially GeH-based devices. | en_US |
dc.description.sponsorship | The numerical calculations reported in this paper were partially performed at TUBITAK ULAKBIM, High Performance and Grid Computing Center (TRUBA resources). | en_US |
dc.language.iso | en | en_US |
dc.publisher | Wiley-v C H verlag Gmbh | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | 2D materials | en_US |
dc.subject | biaxial strain | en_US |
dc.subject | electronic properties | en_US |
dc.subject | GeH/InSe and GeH/In2Se3 heterostructures | en_US |
dc.subject | Schottky barrier | en_US |
dc.title | Electronic Performance and Schottky Contact of 2D GeH/InSe and GeH/In<sub>2</sub>Se<sub>3</sub> Heterostructures: Strain Engineering and Electric Field Tunability | en_US |
dc.type | Article | en_US |
dc.department | TOBB ETÜ | en_US |
dc.authorid | Rahman, Hamad/0000-0002-8885-3985 | - |
dc.identifier.wos | WOS:001268305500001 | en_US |
dc.identifier.scopus | 2-s2.0-85197735703 | en_US |
dc.identifier.doi | 10.1002/adts.202400438 | - |
dc.authorwosid | Rahman, Hamad/K-6055-2013 | - |
dc.authorscopusid | 57208817264 | - |
dc.authorscopusid | 57220891244 | - |
dc.authorscopusid | 57215436031 | - |
dc.authorscopusid | 50861445000 | - |
dc.authorscopusid | 57675302300 | - |
dc.authorscopusid | 57103855100 | - |
dc.authorscopusid | 59157667500 | - |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.identifier.scopusquality | N/A | - |
dc.identifier.wosquality | N/A | - |
dc.description.woscitationindex | Science Citation Index Expanded | - |
item.fulltext | No Fulltext | - |
item.cerifentitytype | Publications | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.openairetype | Article | - |
item.languageiso639-1 | en | - |
item.grantfulltext | none | - |
Appears in Collections: | Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection |
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