Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.11851/11661
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dc.contributor.authorBafekry, Asadollah-
dc.contributor.authorKarbasizadeh, Siavash-
dc.contributor.authorFaraji, Mehrdad-
dc.contributor.authorJappor, Hamad Rahman-
dc.contributor.authorZiabari, Ali Abdolahzadeh-
dc.contributor.authorFadlallah, Mohamed M.-
dc.contributor.authorChang, Gap Soo-
dc.date.accessioned2024-07-24T11:56:53Z-
dc.date.available2024-07-24T11:56:53Z-
dc.date.issued2024-
dc.identifier.issn2513-0390-
dc.identifier.urihttps://doi.org/10.1002/adts.202400438-
dc.identifier.urihttps://hdl.handle.net/20.500.11851/11661-
dc.descriptionRahman, Hamad/0000-0002-8885-3985en_US
dc.description.abstractRecent exciting developments in synthesis and properties study of the germanane (GeH) mono-layer have inspired us to investigate the structural and electronic properties of the van der Waals heterostructures (HTS) of GeH/InSe and GeH/In2Se3 through a first-principles methodology. In this study, structural and electronic properties of the HTS are examined thoroughly. GeH/InSe and GeH/In2Se3 are determined as n-type Schottky with a Schottky barrier height (SBH) of 0.40 eV and n-type ohmic, respectively. GeH/InSe turns out as a semiconductor with a direct bandgap of 0.62 eV, while GeH/In2Se3 is seen to be a metal. The results show that changing of the bandgap and SBH in very small values. For GeH/In2Se3 the effects are even less substantial, as the metallic or n-type nature of the material does not change. The biaxial strain and electric field have more tangible effects on the characteristics of the HTS. A mixture of compressive and tensile strain is seen to have the capability of changing GeH/InSe into a metal and at the same time transform it to an n-type/p-type ohmic or p-type Schottky contact. The results given here can guide future research in the field of HTS and especially GeH-based devices.en_US
dc.description.sponsorshipThe numerical calculations reported in this paper were partially performed at TUBITAK ULAKBIM, High Performance and Grid Computing Center (TRUBA resources).en_US
dc.language.isoenen_US
dc.publisherWiley-v C H verlag Gmbhen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject2D materialsen_US
dc.subjectbiaxial strainen_US
dc.subjectelectronic propertiesen_US
dc.subjectGeH/InSe and GeH/In2Se3 heterostructuresen_US
dc.subjectSchottky barrieren_US
dc.titleElectronic Performance and Schottky Contact of 2d Geh/Inse and Geh/In<sub>2< Heterostructures: Strain Engineering and Electric Field Tunabilityen_US
dc.typeArticleen_US
dc.departmentTOBB ETÜen_US
dc.authoridRahman, Hamad/0000-0002-8885-3985-
dc.identifier.wosWOS:001268305500001en_US
dc.identifier.scopus2-s2.0-85197735703en_US
dc.identifier.doi10.1002/adts.202400438-
dc.authorwosidRahman, Hamad/K-6055-2013-
dc.authorscopusid57208817264-
dc.authorscopusid57220891244-
dc.authorscopusid57215436031-
dc.authorscopusid50861445000-
dc.authorscopusid57675302300-
dc.authorscopusid57103855100-
dc.authorscopusid59157667500-
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.description.woscitationindexScience Citation Index Expanded-
item.openairetypeArticle-
item.languageiso639-1en-
item.grantfulltextnone-
item.fulltextNo Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
Appears in Collections:Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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