Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.11851/3123
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dc.contributor.authorThe ATLAS Collaboration-
dc.contributor.authorSultansoy, Saleh-
dc.date.accessioned2019-12-27T15:11:19Z-
dc.date.available2019-12-27T15:11:19Z-
dc.date.issued2019
dc.identifier.citationATLAS collaboration. (2019). Modelling radiation damage to pixel sensors in the ATLAS detector. Journal of Instrumentation, 14.en_US
dc.identifier.issn1748-0221
dc.identifier.urihttps://hdl.handle.net/20.500.11851/3123-
dc.identifier.urihttps://iopscience.iop.org/article/10.1088/1748-0221/14/06/P06012-
dc.description.abstractSilicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (? 10 1 MeV neq/cm2). © 2019 CERN for the benefit of the ATLAS collaboration. Published by IOP Publishing Ltd on behalf of Sissa Medialab. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence.en_US
dc.language.isoenen_US
dc.publisherInstitute of Physics Publishingen_US
dc.relation.ispartofJournal of Instrumentationen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectSilicon detectorsen_US
dc.subjectpixelsen_US
dc.subjectplanar pixelen_US
dc.titleModelling Radiation Damage To Pixel Sensors in the Atlas Detectoren_US
dc.typeArticleen_US
dc.departmentFaculties, Faculty of Engineering, Department of Material Science and Nanotechnology Engineeringen_US
dc.departmentFakülteler, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümütr_TR
dc.identifier.volume6
dc.identifier.issue6
dc.authorid0000-0003-2340-748X-
dc.identifier.wosWOS:000472134700001en_US
dc.identifier.scopus2-s2.0-85070359632en_US
dc.institutionauthorSultansoy, Saleh F.-
dc.identifier.doi10.1088/1748-0221/14/06/P06012-
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.scopusqualityQ1-
item.openairetypeArticle-
item.languageiso639-1en-
item.grantfulltextnone-
item.fulltextNo Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
crisitem.author.dept02.6. Department of Material Science and Nanotechnology Engineering-
Appears in Collections:Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü / Department of Material Science & Nanotechnology Engineering
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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