Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.11851/8181
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dc.contributor.authorBafekry, A.-
dc.contributor.authorStampfl, C.-
dc.contributor.authorFaraji, M.-
dc.contributor.authorYagmurcukardes, M.-
dc.contributor.authorFadlallah, M. M.-
dc.contributor.authorJappor, H. R.-
dc.contributor.authorGhergherehchi, M.-
dc.date.accessioned2022-01-15T13:00:32Z-
dc.date.available2022-01-15T13:00:32Z-
dc.date.issued2021-
dc.identifier.issn0003-6951-
dc.identifier.issn1077-3118-
dc.identifier.urihttps://doi.org/10.1063/5.0051878-
dc.identifier.urihttps://hdl.handle.net/20.500.11851/8181-
dc.description.abstractMotivated by the recent experimental realization of a two-dimensional (2D) BeN4 monolayer, in this study we investigate the structural, dynamical, electronic, and optical properties of a monolayer and few-layer BeN4 using first-principles calculations. The calculated phonon band dispersion reveals the dynamical stability of a free-standing BeN4 layer, while the cohesive energy indicates the energetic feasibility of the material. Electronic band dispersions show that monolayer BeN4 is a semi-metal whose conduction and valence bands touch each other at the Sigma point. Our results reveal that increasing the layer number from single to six-layers tunes the electronic nature of BeN4. While monolayer and bilayer structures display a semi-metallic behavior, structures thicker than that of three-layers exhibit a metallic nature. Moreover, the optical parameters calculated for monolayer and bilayer structures reveal that the bilayer can absorb visible light in the ultraviolet and visible regions better than the monolayer structure. Our study investigates the electronic properties of Dirac-semimetal BeN4 that can be an important candidate for applications in nanoelectronic and optoelectronic. Published under an exclusive license by AIP Publishing.en_US
dc.description.sponsorshipNational Research Foundation of Korea (NRF) - Korea government (MSIT) [NRF-2015M2B2A4033123]en_US
dc.description.sponsorshipThis work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. NRF-2015M2B2A4033123).en_US
dc.language.isoenen_US
dc.publisherAip Publishingen_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMonolayeren_US
dc.subject1St-Principlesen_US
dc.subjectPointsen_US
dc.subjectPhaseen_US
dc.titleA Dirac-Semimetal Two-Dimensional Ben4: Thickness-Dependent Electronic and Optical Propertiesen_US
dc.typeArticleen_US
dc.departmentFaculties, Faculty of Engineering, Department of Material Science and Nanotechnology Engineeringen_US
dc.departmentFakülteler, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümütr_TR
dc.identifier.volume118en_US
dc.identifier.issue20en_US
dc.authoridJappor, Hamad Rahman / 0000-0002-8885-3985-
dc.identifier.wosWOS:000691329900002en_US
dc.identifier.scopus2-s2.0-85106153956en_US
dc.institutionauthorFaraji, Mehrdad-
dc.identifier.doi10.1063/5.0051878-
dc.authorwosidJappor, Hamad Rahman / K-6055-2013-
dc.authorwosidStampfl, Catherine / C-7133-2018-
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.scopusqualityQ1-
item.openairetypeArticle-
item.languageiso639-1en-
item.grantfulltextnone-
item.fulltextNo Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
Appears in Collections:Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü / Department of Material Science & Nanotechnology Engineering
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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