Submicron Size All-Semiconductor Vertical Cavities With High Q [code 142098]

Abstract

The miniaturization of lasers promises on-chip optical communications and data processing speeds that are beyond the capability of electronics and today's high-speed lasers [1]. Lasers with low-power consumption are one of the most important parts in creating a photonics integrated architecture. This requirement was the motivating force behind the development of small laser and nanolasers. Here, we propose a new method that could be utilized to fabricate such a laser. Oxide-VCSELs require strict control of the oxidation process with significantly reduced reliability for small size, and micropillars have degraded Q with fabrication artifacts for submicron diameter pillars [2]. We propose to use a phase-shifting current-blocking (PSCB) layer serving dual function for a nanocavity device (Fig. 1a) providing both optical- and electrical-confinement via lithographically defined and selectively-biased buried structures. Phase-shifting leads to optical-confinement tuning by layer thickness control and current-blocking provides electrical-confinement. By modifying the dimensions of these layers, the confinement can be tuned by lithographic means [3]. We studied the electromagnetic wave propagation and analyzed the quality factor (Q) of these cavities based on 3D finite difference time domain (FDTD) calculations. © 2019 IEEE