A Review on Recent Advances of Chemical Vapor Deposition Technique for Monolayer Transition Metal Dichalcogenides (mx2: Mo, W; S, Se, Te)
A Review on Recent Advances of Chemical Vapor Deposition Technique for Monolayer Transition Metal Dichalcogenides (mx2: Mo, W; S, Se, Te)
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Özet
Transition metal dichalcogenide (TMD) monolayers have recently garnered significant attention owing to their favorable electronic and optoelectronic properties. To date, chemical vapor deposition (CVD) growth of molybdenum di-sulfide, -selenide, and -telluride (MoS2, MoSe2, and MoTe2, respectively), and tungsten di-sulfide, -selenide, and -telluride (WS2, WSe2, and WTe2, respectively) has been widely investigated as the most promising two-dimensional (2D) TMDs. However, scalable and controllable growth of high-quality TMD monolayers remains a challenge. This review highlights the advances of CVD technique by focusing on the aspects of growth promoters, surface energy assistance and site selectivity, which are of great significance for the growth of monolayer TMDs. The challenges for high-performance applications are discussed at the end with a brief outlook on future work. © 2022 Elsevier Ltd
Açıklama
Anahtar kelimeler
Chemical vapor deposition, Patterned growth, Salt additives, Seeding promoters, Transition metal dichalcogenides, Two-dimensional materials, Chemical vapor deposition, Layered semiconductors, Molybdenum compounds, Monolayers, Sulfur compounds, Transition metals, Tungsten compounds, Chemical vapour deposition, Dichalcogenides, Patterned growth, Salt additive, Seeding promoter, Selenides, Transition metal dichalcogenides, Transition metal dichalcogenides (TMD), Two-dimensional materials, Vapor-deposition techniques, Additives, Monolayers, Chemical vapour deposition, Layered semiconductors, Patterned growth, Additives, Molybdenum compounds, Transition metals, Two-dimensional materials, Seeding promoters, Transition metal dichalcogenides, Transition metal dichalcogenides (TMD), Seeding promoter, Salt additive, Selenides, Dichalcogenides, Salt additives, Chemical vapor deposition, Tungsten compounds, Vapor-deposition techniques, Sulfur compounds
Bilim Dalları
02 engineering and technology, 01 natural sciences, 0104 chemical sciences, 0210 nano-technology
Alıntı
Aras, F. G., Yilmaz, A., Tasdelen, H. G., Ozden, A., Ay, F., Perkgoz, N. K., & Yeltik, A. (2022). A review on recent advances of chemical vapor deposition technique for monolayer transition metal dichalcogenides (MX2: Mo, W; S, Se, Te). Materials Science in Semiconductor Processing, 148, 106829.
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OpenCitations Atıf Sayısı
53
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148
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Başlangıç Sayfası
106829
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