Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.11851/1014
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dc.contributor.authorKayalı, Emre-
dc.contributor.authorMercan, Elif-
dc.contributor.authorÖren, Ersin Emre-
dc.contributor.authorBüke, Zarife Göknur-
dc.date.accessioned2019-05-23T05:48:43Z-
dc.date.available2019-05-23T05:48:43Z-
dc.date.issued2016-04-
dc.identifier.citationKayali, E., Mercan, E., Oren, E. E., & Buke, G. C. (2016). Few layer graphene synthesis via SiC decomposition at low temperature and low vacuum. Journal of Physics D: Applied Physics, 49(16), 165301.en_US
dc.identifier.issn0022-3727-
dc.identifier.othernumber of pages 7-
dc.identifier.urihttps://iopscience.iop.org/article/10.1088/0022-3727/49/16/165301/meta-
dc.identifier.urihttps://hdl.handle.net/20.500.11851/1014-
dc.description.abstractBased on the large-scale availability and good electrical properties, the epitaxial graphene (EG) on SiC exhibits a big potential for future electronic devices. However, it is still necessary to work continuously on lowering the formation temperature and vacuum values of EG while improving the quality and increasing the lateral size to fabricate high-performance electronic devices at reduced processing costs. In this study, we investigated the effect of the presence of Mo plate and hydrogen atmosphere as well as the vacuum annealing durations on SiC decomposition. Our studies showed that the graphene layers can be produced at lower annealing temperatures (1200 degrees C) and vacuum values (10(-4) Torr) in the presence of Mo plate and hydrogen. For high quality continuous graphene formation, Mo plate should be in contact with SiC. If there is a gap between Mo and SiC, non-wetting oxide droplets on few layer graphene (FLG) are recorded. Moreover, it is found that the morphology of these islands can be controlled by changing the annealing time and atmosphere conditions, and applying external disturbances such as vibration.en_US
dc.language.isoenen_US
dc.publisherIOP Publishing Ltden_US
dc.relation.ispartofJournal Of Physics D-Applied Physicsen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectgrapheneen_US
dc.subjecthydrogen annealingen_US
dc.subjectmolybdenumen_US
dc.subjectSiC decompositionen_US
dc.subjectlow vacuumen_US
dc.subjectlow temperatureen_US
dc.titleFew layer graphene synthesis via SiC decomposition at low temperature and low vacuumen_US
dc.typeArticleen_US
dc.departmentFaculties, Faculty of Engineering, Department of Biomedical Engineeringen_US
dc.departmentFaculties, Faculty of Engineering, Department of Material Science and Nanotechnology Engineeringen_US
dc.departmentFakülteler, Mühendislik Fakültesi, Biyomedikal Mühendisliği Bölümütr_TR
dc.departmentFakülteler, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümütr_TR
dc.identifier.volume49-
dc.identifier.issue16-
dc.relation.tubitakTUBITAK [213M481]en_US
dc.authorid0000-0001-9587-519X-
dc.authorid0000-0001-5902-083X-
dc.identifier.wosWOS:000373622900016en_US
dc.identifier.scopus2-s2.0-84963631727en_US
dc.institutionauthorÖren, Ersin Emre-
dc.institutionauthorBüke, Zarife Göknur-
dc.identifier.doi10.1088/0022-3727/49/16/165301-
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.scopusqualityQ1-
item.fulltextNo Fulltext-
item.languageiso639-1en-
item.openairetypeArticle-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.grantfulltextnone-
crisitem.author.dept02.2. Department of Biomedical Engineering-
crisitem.author.dept02.6. Department of Material Science and Nanotechnology Engineering-
Appears in Collections:Biyomedikal Mühendisliği Bölümü / Department of Biomedical Engineering
Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü / Department of Material Science & Nanotechnology Engineering
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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