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|Title:||Epitaxial graphene and carbon nanotubes on silicon carbide||Authors:||Büke G. C.||Issue Date:||2017||Publisher:||CRC Press||Abstract:||Graphene (i.e., a single layer of graphite) and carbon nanotubes (CNTs; i.e., graphene rolled into a cylinder) are excellent candidate materials for advanced applications because of their unique electrical, optical, and mechanical properties combined with a high surface area. The successful development of graphene-/CNT-based technology depends on large-scale availability of the high-quality, reproducible, and uniformly ordered material. One of the most versatile methods to produce vertically, self-aligned CNTs and epitaxial graphene is the vacuum annealing of silicon carbide single crystals [1,2]. This is a very versatile method because carbon is supplied from the carbide lattice as known from the synthesis of carbide-derived carbons (CDCs, see Figure 3.1) and, as no catalysts or secondary phases are utilized; the produced graphene and CNTs exhibit extremely high purity. However, to increase the grain/domain size and quality of these carbon nanostructures, further control of the process is needed. © 2017 by Taylor & Francis Group, LLC.||URI:||https://doi.org/10.1201/9781315371795
|Appears in Collections:||Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü / Department of Material Science & Nanotechnology Engineering|
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
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