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dc.contributor.authorDemir, A.-
dc.contributor.authorApaydın, D.-
dc.contributor.authorKurt, H.-
dc.descriptionThe European Conference on Lasers and Electro-Optics, CLEO_Europe_2019 -- 23 June 2019 through 27 June 2019 -- 142098en_US
dc.description.abstractThe miniaturization of lasers promises on-chip optical communications and data processing speeds that are beyond the capability of electronics and today's high-speed lasers [1]. Lasers with low-power consumption are one of the most important parts in creating a photonics integrated architecture. This requirement was the motivating force behind the development of small laser and nanolasers. Here, we propose a new method that could be utilized to fabricate such a laser. Oxide-VCSELs require strict control of the oxidation process with significantly reduced reliability for small size, and micropillars have degraded Q with fabrication artifacts for submicron diameter pillars [2]. We propose to use a phase-shifting current-blocking (PSCB) layer serving dual function for a nanocavity device (Fig. 1a) providing both optical- and electrical-confinement via lithographically defined and selectively-biased buried structures. Phase-shifting leads to optical-confinement tuning by layer thickness control and current-blocking provides electrical-confinement. By modifying the dimensions of these layers, the confinement can be tuned by lithographic means [3]. We studied the electromagnetic wave propagation and analyzed the quality factor (Q) of these cavities based on 3D finite difference time domain (FDTD) calculations. © 2019 IEEEen_US
dc.publisherOSA - The Optical Societyen_US
dc.relation.ispartofOptics InfoBase Conference Papersen_US
dc.subjectData handlingen_US
dc.subjectElectromagnetic wave propagationen_US
dc.subjectFinite difference time domain methoden_US
dc.subjectOptical communicationen_US
dc.subjectTime domain analysisen_US
dc.subject3d finite difference time domainsen_US
dc.subjectBuried structureen_US
dc.subjectHigh speed laseren_US
dc.subjectIntegrated architectureen_US
dc.subjectLow-power consumptionen_US
dc.subjectOptical confinementen_US
dc.subjectOxidation processen_US
dc.subjectSubmicron diametersen_US
dc.subjectSemiconductor lasersen_US
dc.titleSubmicron size all-semiconductor vertical cavities with high Q [Code 142098]en_US
dc.typeConference Objecten_US
dc.identifier.volumePart F140-CLEO_Europe 2019en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
item.fulltextNo Fulltext-
item.openairetypeConference Object-
Appears in Collections:Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
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