Please use this identifier to cite or link to this item:
Title: Role of gas flow direction on monolayer MoS2 growth on patterned surfaces via CVD
Authors: Aras, Fikret Gonca
Yeltik, Aydan
Keywords: Pattern-mediated growth
chemical vapor deposition
transition metal dichalcogenide
2D material
size distribution
Mono Layer
Issue Date: 2023
Publisher: Iop Publishing Ltd
Abstract: The chemical vapor deposition (CVD) technique has been widely used to grow high quality single layer MoS2 crystals. However, there are still issues that need to be clarified in order to determine the appropriate conditions for the repeatable and scalable process. In this study, we experimentally investigated the effect of flow direction on the size distribution and optical signal of monolayer MoS2 flakes grown on microchannel arrayed surfaces. As an important parameter controlling the CVD process, the carrier gas flow was revealed to be highly sensitive to geometric orientation of the patterned surface. The flow direction parallel to the array yielded larger flakes with narrower size distribution, and enhanced photoluminescence (PL) peak intensities compared to the case with flow normal to the array while the Raman intensities for both the cases are almost the same. The size distributions were obtained as 6 +/- 13 and 37 +/- 4 mu m for the perpendicular and parallel cases, respectively. It was also found that the PL peak intensity increased by approximately 1.5 times when switching to parallel configuration. This study presents an experimental approach to understand the influence of the precursor stream reshaped by the growth surface geometry on the structural and optical properties of monolayer MoS2, which has great potential for use in optoelectronic applications.
ISSN: 0268-1242
Appears in Collections:Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

Show full item record

CORE Recommender

Google ScholarTM



Items in GCRIS Repository are protected by copyright, with all rights reserved, unless otherwise indicated.