Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.11851/11011
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dc.contributor.authorEroglu, A.N.-
dc.contributor.authorAltaf, C.T.-
dc.contributor.authorDemirci, Sankir, N.-
dc.contributor.authorSankir, M.-
dc.date.accessioned2024-01-21T09:24:33Z-
dc.date.available2024-01-21T09:24:33Z-
dc.date.issued2024-
dc.identifier.issn0925-3467-
dc.identifier.urihttps://doi.org/10.1016/j.optmat.2023.114763-
dc.identifier.urihttps://hdl.handle.net/20.500.11851/11011-
dc.description.abstractThe present work reports the excellent alignment of zinc oxide nanorod arrays (ZnO NRAs) patterned via the maskless lithography technique which was used as a photoanode material for photoelectrochemical (PEC) photodetection applications. The effects of circular patterns having different diameters, different gaps between circles, and the utilization of indium sulfide (In2S3) as a light-absorbing material in the visible region have been investigated in the PEC photodetector (PD) system in two different electrolytes. PEC PD performance evaluation confirmed the positive effect of patterned ZnO NRAs-based photoanode in the presence of In2S3, enhancing 982.9 μAcm−2 of current density (Jphoto), 54.6 mA/W of responsivity (Rs), 1.98 × 1011 Jones of detectivity (D*) and 8.18 × 104 of selectivity (S%) values. Besides, the best-performing patterned ZnO NRAs/In2S3 has been used to construct a quasi-solid state assembly using the prepared ionic-gel electrolyte and consequently, 2.19 × 1011 Jones of D* value has been observed. After all, the proposed PEC PD devices exhibited fast rise/decay times(τr/τd) in millisecond extent at 400 nm of wavelength. © 2023 Elsevier B.V.en_US
dc.description.sponsorshipTürkiye Bilimsel ve Teknolojik Araştırma Kurumu, TÜBİTAK; Faculty of Science, Agriculture and Engineering, Newcastle University, SAgEen_US
dc.language.isoenen_US
dc.publisherElsevier B.V.en_US
dc.relation.ispartofOptical Materialsen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectIndium sulfide; Photoelectrochemical photodetector; Photolithography; Zinc oxideen_US
dc.subjectII-VI semiconductors; Lithography; Nanorods; Photodetectors; Photoelectrochemical cells; Photons; Solid electrolytes; Zinc oxide; Circular pattern; Mask-less lithography; Maskless lithography; Photo detection; Photoanode materials; Photoelectrochemical photodetector; Photoelectrochemicals; Self-powered; Zinc oxide nanorod arrays; ZnO nanorod; Sulfur compoundsen_US
dc.titlePatterned ZnO nanorods/indium sulfide based self-powered photoelectrochemical photodetectorsen_US
dc.typeArticleen_US
dc.departmentTOBB ETÜen_US
dc.identifier.volume148en_US
dc.identifier.wosWOS:001153828800001en_US
dc.identifier.scopus2-s2.0-85181763805en_US
dc.institutionauthor-
dc.identifier.doi10.1016/j.optmat.2023.114763-
dc.authorscopusid58799638400-
dc.authorscopusid57204630161-
dc.authorscopusid57201079552-
dc.authorscopusid6506399777-
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
item.fulltextNo Fulltext-
item.grantfulltextnone-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeArticle-
item.cerifentitytypePublications-
Appears in Collections:Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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