Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.11851/2853
Title: Multiphase gan class-d resonant amplifier for high-intensity focused ultrasound
Authors: Gu, L.
Stedman, Q.
Rasmussen, M.
Pai, C. -N.
Brenner, K.
Ma, B.
Ergün, Arif Şanlı
Khuri-Yakub, B.
Davila, J. R.
143696
Keywords: Ultrasonic imaging
radio frequency
gallium nitride
switches
cancer
imaging
transducers
Issue Date: 2019
Publisher:  Institute of Electrical and Electronics Engineers Inc.
Source: Gu, L., Stedman, Q., Rasmussen, M., Pai, C. N., Brenner, K., Ma, B., ... and Davila, J. R. (2019, June). Multiphase GaN Class-D Resonant Amplifier for High-Intensity Focused Ultrasound. In 2019 20th Workshop on Control and Modeling for Power Electronics (COMPEL) (pp. 1-6). IEEE.
Abstract: Focused ultrasound treats tissue deep in the body without damaging surrounding structures. Driven by large-Amplitude RF electrical signals, ultrasonic transducers can generate large pressure acoustic wave. Wide-bandgap semiconductors, e.g., Gallium Nitride (GaN), greatly simplify the design and reduce the requisite size and weight of RF amplifiers, and so improves the portability of focused ultrasound device. Here, we demonstrate a compact 8-phase 5 MHz Class-D resonant amplifier for a focused ultrasound cancer therapy application. © 2019 IEEE.
URI: https://ieeexplore.ieee.org/document/8769682
https://hdl.handle.net/20.500.11851/2853
ISBN: 978-172811842-0
Appears in Collections:Elektrik ve Elektronik Mühendisliği Bölümü / Department of Electrical & Electronics Engineering
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

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