Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.11851/3123
Title: Modelling radiation damage to pixel sensors in the ATLAS detector
Authors: The ATLAS Collaboration
Sultansoy, Saleh
Keywords: Silicon detectors
pixels
planar pixel
Publisher: Institute of Physics Publishing
Source: ATLAS collaboration. (2019). Modelling radiation damage to pixel sensors in the ATLAS detector. Journal of Instrumentation, 14.
Abstract: Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (? 10 1 MeV neq/cm2). © 2019 CERN for the benefit of the ATLAS collaboration. Published by IOP Publishing Ltd on behalf of Sissa Medialab. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence.
URI: https://hdl.handle.net/20.500.11851/3123
https://iopscience.iop.org/article/10.1088/1748-0221/14/06/P06012
ISSN: 1748-0221
Appears in Collections:Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü / Department of Material Science & Nanotechnology Engineering
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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