Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.11851/3874
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dc.contributor.authorMoein, Tania-
dc.contributor.authorGailevicius, Darius-
dc.contributor.authorKatkus, Tomas-
dc.contributor.authorNg, Soon Hock-
dc.contributor.authorLundgaard, Stefan-
dc.contributor.authorVarapnickas, Simonas-
dc.contributor.authorMoss, David J.-
dc.contributor.authorKurt, Hamza-
dc.contributor.authorMizeikis, Vygantas-
dc.contributor.authorStaliunas, Kestutis-
dc.contributor.authorMalinauskas, Mangirdas-
dc.date.accessioned2020-10-22T16:46:28Z-
dc.date.available2020-10-22T16:46:28Z-
dc.date.issued2019-12
dc.identifier.citationMoein, T., Gailevicius, D., Katkus, T., Ng, S. H., Lundgaard, S., Varapnickas, S., ... and Malinauskas, M. (2019, December). Graphene on silicon-nitride photodetector. In SPIE Micro+ Nano Materials, Devices, and Applications 2019 (Vol. 11201, p. 1120105). International Society for Optics and Photonics.en_US
dc.identifier.isbn978-151063142-7
dc.identifier.issn0277-786X
dc.identifier.urihttps://hdl.handle.net/20.500.11851/3874-
dc.identifier.urihttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/11201/2543391/Graphene-on-silicon-nitride-photodetector/10.1117/12.2543391.short?SSO=1-
dc.description.abstractEven though graphene is a gapless material, it demonstrates strong interband absorption from a broad range of wavelengths between VIS and NIR. Recent photocurrent graphene-based detectors demonstrated strong photoresponse signal near the graphene/metal boundaries. To increase the response time of photodetectors, the use of low thermal capacity materials and structures are required. SiN membranes are good candidates due to their high-quality factor (up to 106-107), low mass and excellent optical properties. The motivation for this study was based on a lack of any suitable solution for nano-dimension form factor detector that could be integrated into 3D photonic bandgap structures for real-time internal characterization. © 2019 SPIE.en_US
dc.language.isoenen_US
dc.publisherSPIEen_US
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectThin photodetectoren_US
dc.subjectgrapheneen_US
dc.subjectSi3N4 membraneen_US
dc.titleGraphene on Silicon-Nitride Photodetectoren_US
dc.typeConference Objecten_US
dc.departmentFaculties, Faculty of Engineering, Department of Electrical and Electronics Engineeringen_US
dc.departmentFakülteler, Mühendislik Fakültesi, Elektrik ve Elektronik Mühendisliği Bölümütr_TR
dc.identifier.volume11201
dc.authorid0000-0002-0749-4205-
dc.identifier.wosWOS:000534210100002en_US
dc.identifier.scopus2-s2.0-85079683057en_US
dc.institutionauthorKurt, Hamza-
dc.identifier.doi10.1117/12.2543391-
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.relation.otherThe Society of Photo-Optical Instrumentation Engineers (SPIE)en_US
dc.identifier.scopusquality--
item.cerifentitytypePublications-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeConference Object-
item.fulltextNo Fulltext-
item.grantfulltextnone-
crisitem.author.dept02.5. Department of Electrical and Electronics Engineering-
Appears in Collections:Elektrik ve Elektronik Mühendisliği Bölümü / Department of Electrical & Electronics Engineering
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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