Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.11851/7730
Title: Tunable electronic and magnetic properties of MoSi2N4 monolayer via vacancy defects, atomic adsorption and atomic doping
Authors: Bafekry, A.
Faraji, M.
Fadlallah, Mohamed M.
Khatibani, A. Bagheri
Ziabari, A. Abdolahzadeh
Ghergherehchi, M.
Gogova, D.
Keywords: MoSi2N4 monolayer
Electronic and magnetic properties
Adsorption of atom
Atomic doping
Vacancy defect
Density Functional Theory
Issue Date: 2021
Publisher: Elsevier
Abstract: The two dimensional MoSi2N4 (MSN) monolayer exhibiting rich physical and chemical properties was synthesized for the first time last year. We have used the spin-polarized density functional theory to study the effect of different types of point defects on the structural, electronic, and magnetic properties of the MSN monolayer. Adsorbed, substitutionally doped (at different lattice sites), and some kind of vacancies have been considered as point defects. The computational results show all defects studied decrease the MSN monolayer band gap. We found out the H-, O-, and P-doped MSN are n-type conductors. The arsenic-doped MSN, and MSN with vacancy defects have a magnetic moment. The MSN with a Si vacancy defect is a half-metallic which is favorable for spintronic applications, while the MSN with a single N vacancy or double vacancy (N + S) defects are metallic, i. e., beneficial as spin filters and chemical sensors.
URI: https://doi.org/10.1016/j.apsusc.2021.149862
https://hdl.handle.net/20.500.11851/7730
ISSN: 0169-4332
1873-5584
Appears in Collections:Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü / Department of Material Science & Nanotechnology Engineering
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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