Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.11851/8157
Full metadata record
DC FieldValueLanguage
dc.contributor.authorAltaf, Çiğdem Tuç-
dc.contributor.authorSankır, Mehmet-
dc.contributor.authorSankır, Nurdan Demirci-
dc.date.accessioned2022-01-15T12:58:48Z-
dc.date.available2022-01-15T12:58:48Z-
dc.date.issued2021-
dc.identifier.issn0167-577X-
dc.identifier.issn1873-4979-
dc.identifier.urihttps://doi.org/10.1016/j.matlet.2021.130602-
dc.identifier.urihttps://hdl.handle.net/20.500.11851/8157-
dc.description.abstractCopper-based ternary Cu(In,Ga)S-2 (CIGS) nanoparticles (Np) in chalcopyrite crystal phase have been synthesized via hot-injection method to be used as colloidal Np ink for 3D-ZnO nanosheet thin film sensitization for the enhancement of light absorption in the visible region due to its suitable bandgap. Additionally, an indium sulfide (In2S3) layer has been deposited on the 3D-ZnO/CIGS thin-film for surface modification of CIGS layer to protect against photocorrosion, and bare 3D-ZnO for constructing suitable band alignment in photoelectrochemical water splitting (PEC) applications for hydrogen production. The 3D-ZnO/In2S3 photoelectrode generated the photocurrent density (J) of - 1.1 mA.cm(-2) (at 1.2 V vs. RHE) and an incident photon to-current efficiency (IPCE) of 35.0% at 382 nm. On the other hand, after incorporation of CIGS-Np between 3D-ZnO NS and In2S3 layers, 2.2 mA.cm(-2) of J (at 1.2 V vs. RHE) and 53.2% IPCE at 382 nm have been observed.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofMaterials Lettersen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectNanoparticlesen_US
dc.subjectEnergy storage and conversionen_US
dc.subjectSolar energy materialsen_US
dc.subjectPhotocathodesen_US
dc.subjectEfficienten_US
dc.subjectInken_US
dc.titleSynthesis of Cu(In,Ga)S-2 nanoparticles via hot-injection method and incorporation with 3D-ZnO/In2S3 heterojunction photoanode for enhanced optical and photoelectrochemical propertiesen_US
dc.typeArticleen_US
dc.departmentFaculties, Faculty of Engineering, Department of Material Science and Nanotechnology Engineeringen_US
dc.departmentFakülteler, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümütr_TR
dc.identifier.volume304en_US
dc.authoridDemirci Sankir, Nurdan / 0000-0002-7004-1217-
dc.identifier.wosWOS:000696629700009en_US
dc.identifier.scopus2-s2.0-85112631182en_US
dc.institutionauthorSankır, Mehmet-
dc.institutionauthorDemirci Sankır, Nurdan-
dc.identifier.doi10.1016/j.matlet.2021.130602-
dc.authorwosidALTAF, Cigdem TUC / AAI-5326-2020-
dc.authorscopusid57204845103-
dc.authorscopusid6506399777-
dc.authorscopusid57201079552-
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.scopusqualityQ2-
item.openairetypeArticle-
item.fulltextNo Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.languageiso639-1en-
item.grantfulltextnone-
item.cerifentitytypePublications-
crisitem.author.dept02.6. Department of Material Science and Nanotechnology Engineering-
Appears in Collections:Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü / Department of Material Science & Nanotechnology Engineering
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
Show simple item record

CORE Recommender

SCOPUSTM   
Citations

1
checked on Sep 23, 2022

WEB OF SCIENCETM
Citations

4
checked on Sep 24, 2022

Page view(s)

8
checked on Oct 3, 2022

Google ScholarTM

Check

Altmetric


Items in GCRIS Repository are protected by copyright, with all rights reserved, unless otherwise indicated.