Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.11851/8375
Title: MoRS: An Approximate Fault Modelling Framework for Reduced-Voltage SRAMs
Authors: Yüksel, I.E.
Salami, B.
Ergin, Oğuz
Ünsal, O.S.
Kestelman, A.C.
Keywords: Circuit faults
Data models
Fault-injection
Integrated circuit modeling
Mathematical models
Modeling
Neural Networks
Power demand
Random access memory
SRAM.
Undervolting
Voltage
Deep neural networks
Energy efficiency
Integrated circuits
Memory architecture
Program processors
Software testing
Static random access storage
Circuit faults
Fault injection
Fault model
Integrated circuit modeling
Modeling
Neural-networks
Power demands
Random access memory
SRAM.
Undervolting
Timing circuits
Issue Date: 2022
Publisher: Institute of Electrical and Electronics Engineers Inc.
Abstract: On-chip memory (usually based on Static RAMs-SRAMs) are crucial components for various computing devices including heterogeneous devices, e.g, GPUs, FPGAs, ASICs to achieve high performance. Modern workloads such as Deep Neural Networks (DNNs) running on these heterogeneous fabrics are highly dependent on the on-chip memory architecture for efficient acceleration. Hence, improving the energy-efficiency of such memories directly leads to an efficient system. One of the common methods to save energy is undervolting i.e., supply voltage underscaling below the nominal level. Such systems can be safely undervolted without incurring faults down to a certain voltage limit. This safe range is also called voltage guardband. However, reducing voltage below the guardband level without decreasing frequency causes timing-based faults. In this paper, we propose MoRS, a framework that generates the first approximate undervolting fault model using real faults extracted from experimental undervolting studies on SRAMs to build the model. We inject the faults generated by MoRS into the on-chip memory of the DNN accelerator to evaluate the resilience of the system under the test. MoRS has the advantage of simplicity without any need for high-time overhead experiments while being accurate enough in comparison to a fully randomly-generated fault injection approach. We evaluate our experiment in popular DNN workloads by mapping weights to SRAMs and measure the accuracy difference between the output of the MoRS and the real data. Our results show that the maximum difference between real fault data and the output fault model of MoRS is 6.21%, whereas the maximum difference between real data and random fault injection model is 23.2%. In terms of average proximity to the real data, the output of MoRS outperforms the random fault injection approach by 3.21x. IEEE
URI: https://doi.org/10.1109/TCAD.2021.3120073
https://hdl.handle.net/20.500.11851/8375
ISSN: 0278-0070
Appears in Collections:Bilgisayar Mühendisliği Bölümü / Department of Computer Engineering
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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