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|Title:||The Effect of MOS Transistor Body Connection on Sub-THz Fundamental Oscillator Performance Above 200 GHz in 65-nm CMOS||Authors:||Uluer U.
CMOS integrated circuits
Field effect transistors
Integrated circuit design
|Issue Date:||2021||Publisher:||Institute of Electrical and Electronics Engineers Inc.||Source:||Uluer, U., Tokgoz, K. K., Zencir, E., & Unlu, M. (2021, November). The Effect of MOS Transistor Body Connection on Sub-THz Fundamental Oscillator Performance Above 200 GHz in 65-nm CMOS. In 2021 13th International Conference on Electrical and Electronics Engineering (ELECO) (pp. 514-517). IEEE.||Abstract:||In this paper, the effect of MOS transistor body connection in fundamental signal sources at sub-THz frequencies is analyzed with three different body connections. It is shown that the body connection of the MOS transistor is one of the critical factors for designing efficient fundamental sources in the sub-THz range using CMOS technology. Floating-body type connection show better performance compared to ground-connected body, and direct body-source connections. The design is simulated with an accurate EM solver with a post-layout parasitic-extracted schematic including all the interconnects. Simulations show a 1.57-V peak-to-peak differential output swing with the optimized floating-body approach; while, ground-connected body, and direct body-source connections resulted with 1.26-V and 1.23- V respectively. Oscillator consumes only 11 mW power from a 1-V supply with floating-body approach. © 2021 Chamber of Turkish Electrical Engineers.||Description:||13th International Conference on Electrical and Electronics Engineering, ELECO 2021 -- 25 November 2021 through 27 November 2021 -- -- 176537||URI:||https://doi.org/10.23919/ELECO54474.2021.9677888
|Appears in Collections:||Elektrik ve Elektronik Mühendisliği Bölümü / Department of Electrical & Electronics Engineering|
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
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checked on Feb 6, 2023
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