Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.11851/8678
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dc.contributor.authorBafekry, A.-
dc.contributor.authorFaraji, M.-
dc.contributor.authorHieu, N. N.-
dc.contributor.authorKhatibani, A. Bagheri-
dc.contributor.authorFadlallah, Mohamed M.-
dc.contributor.authorGogova, D.-
dc.contributor.authorGhergherehchi, M.-
dc.date.accessioned2022-07-30T16:45:47Z-
dc.date.available2022-07-30T16:45:47Z-
dc.date.issued2022-
dc.identifier.citationBafekry, A., Faraji, M., Hieu, N. N., Khatibani, A. B., Fadlallah, M. M., Gogova, D., & Ghergherehchi, M. (2022). Tunable electronic properties of porous graphitic carbon nitride (C6N7) monolayer by atomic doping and embedding: a first-principle study. Applied Surface Science, 583, 152270.en_US
dc.identifier.issn0169-4332-
dc.identifier.issn1873-5584-
dc.identifier.urihttps://doi.org/10.1016/j.apsusc.2021.152270-
dc.identifier.urihttps://hdl.handle.net/20.500.11851/8678-
dc.description.abstractMotivated by the successful synthesis of the porous graphitic carbon nitride (C6N7) monolayer very recently, we investigate the structural and electronic properties of C6N7 with doped and embedded with various atoms by means of spin-polarized density functional theory calculations. C6N7 monolayers doped with B, N, C, and O atoms have been revealed as stable and predicted to be feasible for experimental fabrication as free-standing monolayers based on the energy and thermal stability. Our computations demonstrate that while the C6N7 is a semiconductor, the doped C6N7 monolayers can be metal, dilute-magnetic semiconductor or half-metal. Further, a non magnetic moment is discovered in three of the doped C6N7 models and their electronic properties are disclosed to depend strongly on the spin configurations. The electronic properties of C6N7 depend on the doping atoms and doping sites. Furthermore, the effect of embedding of common nonmetal atoms such as B, C, N, S, O, Al, Si and P as well as transition metal including Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn atoms on the electronic and magnetic behavior of the C6N7 are studied. The charge transfer analysis shows that all embedded atoms act as electron donors, expect N, O and S atoms which act as electron acceptors when interacting with C6N7. The modification of the electronic band structure of C6N7 as the underlying mechanism for the changes in its electronic properties has been investigated. The intention is to demonstrate how entering the above mentioned impurities changes the nature of C6N7 into a metal, ferromagnetic-metal or dilute-magnetic semiconductor. These findings give not only an insight into the physical properties of doped and embedded C6N7 monolayer by different atoms, but also can serve as a guide to discover future possible applications of this novel material.en_US
dc.description.sponsorshipNational Research Foundation of Korea - Korean government [NRF-2015M2B2A4033123]en_US
dc.description.sponsorshipThis work was supported by the National Research Foundation of Korea grant funded by the Korean government (NRF-2015M2B2A4033123) . Computational resources were provided by TUBITAK ULAKBIM, at the High Performance and Grid Computing Center (TR-Grid e-Infrastructure) .en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofApplied Surface Scienceen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectPorous graphitic carbon nitrideen_US
dc.subjectC6N7 monolayeren_US
dc.subjectAtomic dopingen_US
dc.subjectAtomic embeddingen_US
dc.subjectTunable electronic propertiesen_US
dc.subjectFirst-principle studyen_US
dc.subjectMagnetic-Propertiesen_US
dc.subjectEfficienten_US
dc.subjectFielden_US
dc.subjectNanosheetsen_US
dc.subjectLayersen_US
dc.subjectGasen_US
dc.titleTunable electronic properties of porous graphitic carbon nitride (C6N7) monolayer by atomic doping and embedding: A first-principle studyen_US
dc.typeArticleen_US
dc.departmentFakülteler, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümüen_US
dc.departmentFaculties, Faculty of Engineering, Department of Material Science and Nanotechnology Engineeringen_US
dc.identifier.volume583en_US
dc.authoridBagheri Khatibani, Abbas/0000-0002-3695-8689-
dc.authoridBafekry, Asadollah/0000-0002-9297-7382-
dc.identifier.wosWOS:000773627900007en_US
dc.identifier.scopus2-s2.0-85123169756en_US
dc.institutionauthorFaraji, Mehrdad-
dc.identifier.doi10.1016/j.apsusc.2021.152270-
dc.authorscopusid57208817264-
dc.authorscopusid57215436031-
dc.authorscopusid24471154800-
dc.authorscopusid57224891848-
dc.authorscopusid57103855100-
dc.authorscopusid6603921476-
dc.authorscopusid35275008800-
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - İdari Personel ve Öğrencien_US
item.cerifentitytypePublications-
item.grantfulltextnone-
item.openairetypeArticle-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextNo Fulltext-
item.languageiso639-1en-
Appears in Collections:Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü / Department of Material Science & Nanotechnology Engineering
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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