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|Title:||Graphene on Silicon-Nitride Photodetector||Authors:||Moein, Tania
Ng, Soon Hock
Moss, David J.
|Issue Date:||Dec-2019||Publisher:||SPIE||Source:||Moein, T., Gailevicius, D., Katkus, T., Ng, S. H., Lundgaard, S., Varapnickas, S., ... and Malinauskas, M. (2019, December). Graphene on silicon-nitride photodetector. In SPIE Micro+ Nano Materials, Devices, and Applications 2019 (Vol. 11201, p. 1120105). International Society for Optics and Photonics.||Abstract:||Even though graphene is a gapless material, it demonstrates strong interband absorption from a broad range of wavelengths between VIS and NIR. Recent photocurrent graphene-based detectors demonstrated strong photoresponse signal near the graphene/metal boundaries. To increase the response time of photodetectors, the use of low thermal capacity materials and structures are required. SiN membranes are good candidates due to their high-quality factor (up to 106-107), low mass and excellent optical properties. The motivation for this study was based on a lack of any suitable solution for nano-dimension form factor detector that could be integrated into 3D photonic bandgap structures for real-time internal characterization. © 2019 SPIE.||URI:||https://hdl.handle.net/20.500.11851/3874
|Appears in Collections:||Elektrik ve Elektronik Mühendisliği Bölümü / Department of Electrical & Electronics Engineering|
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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