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|Title:||Submicron size all-semiconductor vertical cavities with high Q||Authors:||Demir, A.
Electromagnetic wave propagation
Finite difference time domain method
Time domain analysis
3d finite difference time domains
High speed laser
|Issue Date:||2019||Publisher:||OSA - The Optical Society||Abstract:||The miniaturization of lasers promises on-chip optical communications and data processing speeds that are beyond the capability of electronics and today's high-speed lasers . Lasers with low-power consumption are one of the most important parts in creating a photonics integrated architecture. This requirement was the motivating force behind the development of small laser and nanolasers. Here, we propose a new method that could be utilized to fabricate such a laser. Oxide-VCSELs require strict control of the oxidation process with significantly reduced reliability for small size, and micropillars have degraded Q with fabrication artifacts for submicron diameter pillars . We propose to use a phase-shifting current-blocking (PSCB) layer serving dual function for a nanocavity device (Fig. 1a) providing both optical- and electrical-confinement via lithographically defined and selectively-biased buried structures. Phase-shifting leads to optical-confinement tuning by layer thickness control and current-blocking provides electrical-confinement. By modifying the dimensions of these layers, the confinement can be tuned by lithographic means . We studied the electromagnetic wave propagation and analyzed the quality factor (Q) of these cavities based on 3D finite difference time domain (FDTD) calculations. © 2019 IEEE||Description:||The European Conference on Lasers and Electro-Optics, CLEO_Europe_2019 -- 23 June 2019 through 27 June 2019 -- 142098||URI:||https://hdl.handle.net/20.500.11851/9937||ISBN:||9.78E+12|
|Appears in Collections:||Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection|
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